Non-volatile memory and forming method thereof

ABSTRACT

A non-volatile memory includes a substrate, a plurality of gate stacked strips and a plurality of contact plugs. The substrate includes a plurality of diffusion strips. The plurality of gate stacked strips are disposed over the diffusion strips, wherein each of the gate stacked strips includes a charge storage layer and a gate conductor layer stacked from bottom to top. The plurality of contact plugs are disposed on the diffusion strips between the gate stacked strips, wherein a sidewall of each of the gate conductor layer beside the contact plugs and above the diffusion strips has a step profile.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a division of U.S. application Ser. No. 16/747,484,filed on Jan. 20, 2020. The content of the application is incorporatedherein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates generally to a non-volatile memory andforming method thereof, and more specifically to a non-volatile memoryhaving step-profile gates and forming method thereof.

2. Description of the Prior Art

There are many types of non-volatile memory. Flash memory is the mostpopular type, and other types may includesilicon-oxide-nitride-oxide-silicon (SONOS), ferroelectric random accessmemory (FRAM), phase-change random access memory (PRAM),magnetoresistive access memory (MRAM) and resistive random access memory(RRAM). FLASH, SONOS and FRAM are charge storage memory, which areoperated by charging and discharging capacitors.

For example, by applying silicon-oxide-nitride-oxide-silicon (SONOS) asdata storage units, one transistor can store two bits at the same time.This can shrink the sizes of components and improve memory capacity.When a SONOS memory is programmed, charge is transferred from asubstrate to a silicon nitride layer of an ONO layer. For example, as avoltage difference is applied between a gate and a drain, a verticalelectric field and a lateral electric field are built, and thus thespeed of electrons along a gate channel increases. When the electronsmove along the channel, some of these electrons tunnel through thebottom of the ONO layer and are trapped in the silicon nitride layer ofthe ONO layer. Because the largest electric field occurs near the drain,most electrons are trapped in the drain. In contrast, when a reversesvoltage difference is applied between a source and a drain, theelectrons move along an opposite direction, and are injected into thesilicon nitride layer near the source. Since the silicon nitride layeris non-conductive, these charges injected into the silicon nitride layerare restricted in localized areas. Therefore, charges can be stored indifferent regions of one single silicon nitride layer, depending on theapplied voltage.

SUMMARY OF THE INVENTION

The present invention provides a non-volatile memory and forming methodthereof, which forms gate conductor layers having step-profiles, toincrease distances between parts of the gate conductor layers and thecontact plugs, thereby avoiding short circuits and reducing criticaldimensions of elements.

The present invention provides a non-volatile memory including asubstrate, a plurality of gate stacked strips and a plurality of contactplugs. The substrate includes a plurality of diffusion strips. Theplurality of gate stacked strips are disposed over the diffusion strips,wherein each of the gate stacked strips includes a charge storage layerand a gate conductor layer stacked from bottom to top. The plurality ofcontact plugs are disposed on the diffusion strips between the gatestacked strips, wherein a sidewall of each of the gate conductor layerbeside the contact plugs and above the diffusion strips has a stepprofile.

The present invention provides a method of forming a non-volatile memoryincluding the following steps. A substrate including a plurality ofdiffusion strips is provided. A plurality of patterned gate stackedstrips are formed over the diffusion strips, wherein each of thepatterned gate stacked strips includes a charge storage layer and afirst gate conductor layer stacked from bottom to top. A dielectriclayer covers the patterned gate stacked strips and the substrate,wherein the dielectric layer has recesses exposing only first parts ofthe first gate conductor layers on the diffusion strips. Second gateconductor layers fill into the recesses, to form a plurality of gateconductor layers, wherein a sidewall of each of the gate conductorlayers includes a step profile. The dielectric layer is removed. Aplurality of contact plugs are formed on the diffusion strips betweenthe step profiles of the gate conductor layers.

According to the above, the present invention provides a non-volatilememory and forming method thereof, which provides a substrate includinga plurality of diffusion strips; forms a plurality of gate stackedstrips over the diffusion strips, wherein each of the gate stackedstrips includes a charge storage layer and a first gate conductor layerstacked from bottom to top; forms a plurality of contact plugs on thediffusion strips between the gate stacked strips, wherein a sidewall ofeach of the gate conductor layer on the diffusion strips and beside thecontact plugs has a step profile. By doing this, distances between thecontact plugs and upper parts of the gate conductor layers can beincreased. Thereby, short circuits caused by the contacting of thecontact plugs and the gate conductor layers can be avoided. This reducescritical dimensions of elements, increases stability of components, hasmore flexible layouts and increases processing windows. Besides,impurities doped into the substrate right below the gate conductorlayers and the charge storage layers can be avoided, to preventperformance of components from being degraded.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 schematically depicts a top view of a non-volatile memoryaccording to an embodiment of the present invention.

FIG. 2 schematically depicts a three-dimensional diagram of a part of anon-volatile memory according to an embodiment of the present invention.

FIG. 3 schematically depicts a top view and a cross-sectional view of anon-volatile memory according to an embodiment of the present invention.

FIG. 4 schematically depicts a top view and a cross-sectional view of anon-volatile memory according to an embodiment of the present invention.

FIG. 5 schematically depicts a top view and a cross-sectional view of anon-volatile memory according to an embodiment of the present invention.

FIG. 6 schematically depicts a top view and a cross-sectional view of anon-volatile memory according to an embodiment of the present invention.

FIG. 7 schematically depicts a top view and a cross-sectional view of anon-volatile memory according to an embodiment of the present invention.

FIG. 8 schematically depicts a top view and a cross-sectional view of anon-volatile memory according to an embodiment of the present invention.

FIG. 9 schematically depicts a top view and a cross-sectional view of anon-volatile memory according to an embodiment of the present invention.

DETAILED DESCRIPTION

FIG. 1 schematically depicts a top view of a non-volatile memoryaccording to an embodiment of the present invention. FIG. 2schematically depicts a three-dimensional diagram of a part of anon-volatile memory according to an embodiment of the present invention.Please refer to FIGS. 1-2 , a substrate 110 is provided. The substrate110 may be a semiconductor substrate such as a silicon substrate, asilicon containing substrate, a III-V group-on-silicon (such asGaN-on-silicon) substrate, a graphene-on-silicon substrate, asilicon-on-insulator (SOI) substrate or a substrate containing epitaxiallayers. The substrate 110 may include a plurality of diffusion strips112. Each of the diffusion strips 112 can be isolated by isolationstructures 10. The isolation structures 10 may be shallow trenchisolation (STI) structures, which may be a shallow trench isolation(STI) process, but it is not limited thereto.

A plurality of gate stacked strips 120 are located on the substrate 110and over the diffusion strips 112. Each of the gate stacked strips 120includes a charge storage layer 122 and a gate conductor layer 124stacked from bottom to top. In this embedment, the charge storage layer122 is an oxide/nitride/oxide (ONO) layer and the gate conductor layer124 is a polysilicon layer. In other embodiments, the charge storagelayer 122 and the gate conductor layer 124 may be other materials,depending upon practical requirements.

A plurality of contact plugs 130 are disposed on the diffusion strips112 between the gate stacked strips 120. Each of the contact plugs 130may include a barrier layer (not shown) surrounding a metal (not shown),wherein the barrier layer may include titanium nitride, and the metalmay include copper or tungsten etc. Preferably, the contact plugs 130have taper cross-sectional profiles broaden from bottom to top; stillpreferably, the contact plugs 130 have cone shapes, enabling the barrierlayers and the metal filling into contact holes for forming the contactplugs 130 easily. Source regions (or drain regions) 140 are disposed inthe diffusion strips 112 right below the contact plugs 130.

As shown in FIG. 2 , a sidewall S1 of each of the gate conductor layer124 on the diffusion strips 112 and beside the contact plugs 130 has astep profile. In this embodiment, the step profile includes L-shapecross-sectional profiles, therefore the gate conductor layer 124 canbeing formed easily. More precisely, each of the L-shape cross-sectionalprofiles has a vertical part V1 and a horizontal part V2. Preferably, aminimum distance 11 between the vertical part V1 and the correspondingcontact plug 130 is larger than a minimum distance 12 between thehorizontal part V2 and the corresponding contact plug 130, to avoidshort circuit from occurring caused by the gate conductor layer 124contacting the corresponding contact plug 130. Still preferably, aheight h1 of the horizontal part V2 is ¼-⅓ of a maximum height h of eachof the L-shape cross-sectional profiles. For example, a ratio of a widthw1 of the vertical part V1 and a width w2 of the horizontal part V2 is⅔, to keep a distance between the gate conductor layer 124 and thecorresponding contact plug 130. Hence, critical dimensions of elementsare shrunk, stability of components are improved, flexible layouts areobtained, processing windows are increased, and sizes of the chargestorage layers 122 are kept to preserve the charge storage ability.Besides, impurities doped into the substrate 110 right below the gateconductor layers 124 and the charge storage layers 122 while performingimplant processes for forming source regions/drain regions and/orlightly doped source regions/drain regions can be avoided, to preventperformance of components from being degraded.

FIGS. 3-9 schematically depict top views and cross-sectional views of anon-volatile memory according to an embodiment of the present invention.For clarifying the present invention, please refer to FIGS. 1-2 at thesame time. As shown in FIG. 3 , the substrate 110 is provided, whereinthe substrate 110 may include the plurality of diffusion strips 112 andthe isolation structures 10 isolating the diffusion strips 112. Forinstance, recesses may be formed in a bulk substrate (not shown), anisolation material fills into the recesses to form the isolationstructures 10 and define areas for forming the diffusion strips 112, andthen the diffusion strips 112 are formed simultaneously or respectivelyby implant processes, but the present invention is not restrictedthereto.

Please refer to FIGS. 3-4 , patterned gate stacked strips 120 a aredisposed over the diffusion strips 112. Methods of forming the patternedgate stacked strips 120 a may include the following steps, but it is notlimited thereto. As shown in FIG. 3 , a blanket charge storage layer122′ and a first conductor layer 124′ are sequentially formed on thesubstrate 110. As shown in FIG. 4 , the first conductor layer 124′ andthe blanket charge storage layer 122′ are patterned to form thepatterned gate stacked strips 120 a, wherein each of the patterned gatestacked strips 120 a includes the charge storage layer 122 and a firstgate conductor layer 124 a stacked from bottom to top. The first gateconductor layer 124 a may be a polysilicon layer for forming apolysilicon gate conductor layer.

Please refer to FIGS. 5-6 , a dielectric layer 20 a covers the patternedgate stacked strips 120 a and the substrate 110, wherein the dielectriclayer 20 a has recesses R, and the recesses R only expose first parts Pof the first gate conductor layers 124 a on the diffusion strips 112.Methods of forming the dielectric layer 20 a may include the following,but it is not limited thereto. As shown in FIG. 5 , a blanket dielectriclayer 20 is deposited to cover the patterned gate stacked strips 120 aand the substrate 110. As shown in FIG. 6 , the blanket dielectric layer20 is patterned to form the dielectric layer 20 a, and the recesses R inthe dielectric layer 20 a, wherein the recesses R expose the first partsP of the first gate conductor layers 124 a. In this embodiment, only thefirst parts P of the first gate conductor layers 124 a are exposed, forforming gate conductor layers having L-shape cross-sectional profiles inlater processes.

Please refer to FIGS. 7-8 , second gate conductor layers 150 fill intothe recesses R, to form the plurality of gate conductor layers 124,wherein the sidewall S1 of each of the gate conductor layers 124 has astep profile. Methods of filling the second gate conductor layers 150into the recesses R may include the following steps. As shown in FIG. 7, a second conductor layer 150′ is deposited into the recesses R and onthe dielectric layer 20 a. As shown in FIG. 8 , the second conductorlayer 150′ exceeding from the recesses R is removed to form the secondgate conductor layers 150 in the recesses R. Thus, the first gateconductor layers 124 a and the second gate conductor layers 150constitute the gate conductor layers 124, and the gate conductor layers124 have step profiles. In one case, the first gate conductor layers 124a and the second gate conductor layers 150 have common materials, whichmay be polysilicon to form polysilicon gate conductor layers.

Above all, the step profiles have L-shape cross-sectional profiles, butit is not restricted thereto. By applying the methods of thisembodiment, the vertical parts V1 of the L-shape cross-sectionalprofiles are the second gate conductor layers 150 while the horizontalparts V2 are the first gate conductor layers 124 a, but it is notlimited thereto. Preferably, the height h1 of each of the horizontalparts V2 is ¼-⅓ of the maximum height h of each of the L-shapecross-sectional profiles. Still preferably, a ratio of the width w1 ofeach of the second gate conductor layers 150 and the width w2 of each ofthe first gate conductor layers 124 a is ⅔, to increase distancesbetween the gate conductor layers 124 and the later formed contact plugs130.

The dielectric layer 20 a is removed, as shown in FIG. 9 . Thereafter,source regions (or drain regions) 140 are formed in the diffusion strips112, and then the plurality of contact plugs 130 are formed on thesource regions (or drain regions) 140 between the gate conductor layers124. Methods of forming the contact plugs 130 may include the following.A dielectric layer (not shown) may blanketly cover the substrate 110between the gate conductor layers 124, the dielectric layer is etched toform contact holes in the dielectric layer, and then barrier layers (notshown) and metal (not shown) fill into the contact holes to form thecontact plugs 130. The contact holes and the contact plugs 130 havetaper cross-sectional profiles broaden from bottom to top, so that thecontact plugs 130 can fill into the contact holes easily. For example,each of the contact plugs 130 has a cone shape, but it is not limitedthereto. Then, later non-volatile memory processes are processed. Theseprocesses are not described.

To summarize, the present invention provides a non-volatile memory andforming method thereof, which provides a substrate including a pluralityof diffusion strips; forms a plurality of gate stacked strips over thediffusion strips, wherein each of the gate stacked strips includes acharge storage layer and a gate conductor layer stacked from bottom totop; forms a plurality of contact plugs on the diffusion strips betweenthe gate stacked strips, wherein a sidewall of each of the gateconductor layer on the diffusion strips and beside the contact plugs hasa step profile. By doing this, distances between the contact plugs andupper parts of the gate conductor layers can be increased. Thereby,short circuits caused by the contacting of the contact plugs and thegate conductor layers can be avoided. This shrinks critical dimensionsof elements, improves stability of components, has more flexible layoutsand increases processing windows. Meanwhile, sizes of the charge storagelayers are kept and thus charge storage capacity is preserved. Besides,impurities doped into the substrate right below the gate conductorlayers and the charge storage layers while performing implant processesfor forming source regions/drain regions or/and lightly doped sourceregions/drain regions can be avoided, to prevent performance ofcomponents from being degraded.

Moreover, the step profiles are preferably L-shape cross-sectionalprofiles, so that the gate conductor layers can be formed easily,wherein each of the L-shape cross-sectional profiles has a vertical partand a horizontal part. The contact plugs preferably have tapercross-sectional profiles broaden from bottom to top, enabling thecontact plugs filling into contact holes easily. For instance, each ofthe contact plugs preferably has a cone shape. A minimum distancebetween the vertical part and the corresponding contact plug is largerthan a minimum distance between the horizontal part and thecorresponding contact plug, to prevent the gate conductor layer fromcontacting the corresponding contact plug.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A method of forming a non-volatile memory,comprising: providing a substrate comprising a plurality of diffusionstrips; forming a plurality of patterned gate stacked strips over thediffusion strips, wherein each of the patterned gate stacked stripscomprises a charge storage layer and a first gate conductor layerstacked from bottom to top; forming a dielectric layer covering thepatterned gate stacked strips and the substrate, wherein the dielectriclayer has recesses exposing only first parts of the first gate conductorlayers on the diffusion strips; filling second gate conductor layersinto the recesses, to form a plurality of gate conductor layers, whereina sidewall of each of the gate conductor layers comprises a stepprofile; removing the dielectric layer; and forming a plurality ofcontact plugs on the diffusion strips between the step profiles of thegate conductor layers.
 2. The method of forming a non-volatile memoryaccording to claim 1, wherein the steps of forming the patterned gatestacked strips comprise: sequentially forming a blanket charge storagelayer and a first conductor layer on the substrate; and patterning thefirst conductor layer and the blanket charge storage layer to form thepatterned gate stacked strips.
 3. The method of forming a non-volatilememory according to claim 1, wherein the steps of removing thedielectric layer comprise: depositing a blanket dielectric layercovering the patterned gate stacked strips and the substrate; andpatterning the blanket dielectric layer to form the recesses and exposethe first parts of the first gate conductor layers on the diffusionstrips.
 4. The method of forming a non-volatile memory according toclaim 1, wherein the steps of filling the second gate conductor layersinto the recesses comprise: depositing a second conductor layer into therecesses and on the dielectric layer; and removing the second conductorlayer exceeding from the recesses to form the second gate conductorlayers into the recesses.
 5. The method of forming a non-volatile memoryaccording to claim 1, wherein the step profiles comprise L-shapecross-sectional profiles, and each of the L-shape cross-sectionalprofiles has a vertical part and a horizontal part.
 6. The method offorming a non-volatile memory according to claim 5, wherein a height ofthe horizontal part is ¼-⅓ of a maximum height of each of the L-shapecross-sectional profiles.
 7. The method of forming a non-volatile memoryaccording to claim 5, wherein a ratio of a width of the vertical partand a width of the horizontal part is ⅔.
 8. The method of forming anon-volatile memory according to claim 1, further comprising: formingsource regions or drain regions in the diffusion strips before thecontact plugs are formed; and forming the contact plugs on the sourceregions or the drain regions.
 9. The method of forming a non-volatilememory according to claim 1, wherein each of the contact plugs has ataper cross-sectional profile broaden from bottom to top.